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BCR8PM-12L
Triac
Medium Power Use
REJ03G0303-0200 Rev.2.00 Nov.08.2004
Features
* * * * IT (RMS) : 8 A VDRM : 600 V IFGTI, IRGTI, IRGTIII : 30 mA (20 mA)Note5 Viso : 2000 V * Insulated Type * Planar Passivation Type * UL Recognized : Yellow Card No. E223904 File No. E80271
Outline
TO-220F
2
3 1 1 2 3
1. T1 Terminal 2. T2 Terminal 3. Gate Terminal
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, and carpet, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V
Rev.2.00,
Nov.08.2004,
page 1 of 7
BCR8PM-12L
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Viso Ratings 8 80 26 5 0.5 10 2 - 40 to +125 - 40 to +125 2.0 2000 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 88C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case
Electrical Characteristics
Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) Min. -- -- -- -- -- -- -- -- 0.2 -- Typ. -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.6 1.5 1.5 1.5 30Note5 30Note5 30Note5 -- 3.7 Unit mA V V V V mA mA mA V C/W Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 12 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Junction to caseNote3
Gate trigger currentNote2
Gate non-trigger voltage Thermal resistance
(dv/dt)c 10 -- -- V/s Tj = 125C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 4.0 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load)
Supply Voltage
Time (di/dt)c Time Time VD
Main Current Main Voltage (dv/dt)c
Rev.2.00,
Nov.08.2004,
page 2 of 7
BCR8PM-12L
Performance Curves
Maximum On-State Characteristics
10 7 5 3 2 101 7 5 3 2 10 7 5 3 2 10
-1 0 2
Rated Surge On-State Current
100
Surge On-State Current (A)
90 80 70 60 50 40 30 20 10 00 10 23 5 7 10
1
On-State Current (A)
Tj = 125C
Tj = 25C
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
23
5 7 10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C)
Gate Characteristics (I, II and III)
3 2 VGM = 10V
Gate Trigger Current vs. Junction Temperature
103 7 5 3 2
IRGT III Typical Example
PG(AV) = 0.5W PGM = 5W IGM = 2A
Gate Voltage (V)
101 7 5 3 2 100 7 5 3 2 10
-1
VGT = 1.5V
102 IRGT I, IFGT I 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140
IFGT I IRGT I, IRGT III
VGD = 0.2V
7 5 101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Gate Current (mA)
Junction Temperature (C)
Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C)
Gate Trigger Voltage vs. Junction Temperature
10 7 5 3 2 10 7 5 3 2 10 -60 -40-20 0 20 40 60 80 100 120 140
1 2
Maximum Transient Thermal Impedance Characteristics (Junction to case)
Transient Thermal Impedance (C/W)
102 2 3 5 7103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102
3
Typical Example
Junction Temperature (C)
Conduction Time (Cycles at 60Hz)
Rev.2.00,
Nov.08.2004,
page 3 of 7
BCR8PM-12L
Maximum Transient Thermal Impedance Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
16
Transient Thermal Impedance (C/W)
10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 1
3
On-State Power Dissipation (W)
No Fins
14 12 360 Conduction
Resistive,
10 inductive loads 8 6 4 2 0 0 2 4 6 8 10 12 14 16
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710
2
3
4
5
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs. RMS On-State Current
160
Curves apply regardless of conduction angle
Allowable Ambient Temperature vs. RMS On-State Current
160
All fins are black painted aluminum and greased 120 x 120 x t2.3 100 x 100 x t2.3 60 x 60 x t2.3 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection
120 100 80 60 40
360 Conduction 20 Resistive, inductive loads
Ambient Temperature (C)
Case Temperature (C)
140
140 120 100 80 60 40 20 0 0 2 4
0 0
2
4
6
8
10 12 14 16
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C)
Allowable Ambient Temperature vs. RMS On-State Current
160
Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads
Repetitive Peak Off-State Current vs. Junction Temperature
105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 10 -60 -40-20 0 20 40 60 80 100 120 140
2
Typical Example
Ambient Temperature (C)
140 120 100 80 60 40 20 0 0 0.5 1.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
Junction Temperature (C)
Rev.2.00,
Nov.08.2004,
page 4 of 7
BCR8PM-12L
Holding Current vs. Junction Temperature
Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C)
103 7 5 3 2 102 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140
Typical Example
Latching Current vs. Junction Temperature
103 7 5 3 2 10 7 5 3 2
2
Latching Current (mA)
Distribution
T2+, G- Typical Example
101 7 5 3 ++ 2 T2-, G- Typical Example T2 , G 0 10 -40 0 40 80
120
160
Junction Temperature (C)
Junction Temperature (C)
Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs. Junction Temperature
Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C)
160
Typical Example
Breakover Voltage vs. Rate of Rise of Off-State Voltage
160 140 120 100 80 60 40 20
I Quadrant III Quadrant Typical Example Tj = 125C
140 120 100 80 60 40 20 0 -60 -40-20 0 20 40 60 80 100 120 140
01 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710
Junction Temperature (C)
Rate of Rise of Off-State Voltage (V/s)
Commutation Characteristics
Critical Rate of Rise of Off-State Commutating Voltage (V/s)
7 5 3 2
1
Gate Trigger Current vs. Gate Current Pulse Width
Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC)
10 7 5 3 2 102 7 5 3 2 10 0 10
1 3
Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time
10 7 5 Minimum Characteristics 3 2
Value
Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz
Typical Example IFGT I IRGT I IRGT III
I Quadrant III Quadrant
100 70 10
23
5 7 101
23
5 7 102
23
5 7 101
23
5 7 102
Rate of Decay of On-State Commutating Current (A/ms)
Gate Current Pulse Width (s)
Rev.2.00,
Nov.08.2004,
page 5 of 7
BCR8PM-12L
Gate Trigger Characteristics Test Circuits
6 6
6V V
A 330
6V V
A 330
Test Procedure I 6
Test Procedure II
6V V
A 330
Test Procedure III
Rev.2.00,
Nov.08.2004,
page 6 of 7
BCR8PM-12L
Package Dimensions
TO-220F
EIAJ Package Code
Conforms
JEDEC Code
Mass (g) (reference value)
2.0
Lead Material
Cu alloy
10.5 max 5.2 2.8
5.0
1.2 17 3.6 13.5 min
1.3 max 0.8
8.5
3.2 0.2
2.54
2.54
0.5
2.6
4.5
Symbol A A1 A2 b D E e x y y1 ZD ZE
Dimension in Millimeters Min Typ Max
Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order code example BCR8PM-12LA BCR8PM-12LA-A8
Straight type Vinyl sack 100 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A - Lead forming code Note : Please confirm the specification about the shipping in detail.
Rev.2.00,
Nov.08.2004,
page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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